JOINT MEETING EUROPEAN FREQUENCY AND TIME
FORUM – IEEE – IFCS –
13-16 APRIL 1999 –
BESANCON – FRANCE
ONE GIGAHERTZ LOW PHASE
NOISE OSCILLATOR
FOR ON BOARD AVIONIC APPLICATIONS
O. FRANQUET
A.R.ELECTRONIQUE F-25048 BESANÇON
B. WOLCOFF
A.R.ELECTRONIQUE F-78500 SARTROUVILLE
1-ABSTRACT
The aim of this paper is the presentation of a
low phase noise 1 GHz oscillator developed by A.R.Electronique for
tactical on board avionic applications. The typically requested
performances for UHF oscillators in radar applications are :
- low phase noise level under vibrations,
- high harmonic purity,
- small frequency deviation in an extended range of temperature,
- compact volume.
To reach this level of performances, A.R.Electronique
has developed a design based on the use of a VHF AT CUT CRYSTAL
with optimized low g sensitivity parameters. The XTAL oscillator
frequency is multiplied and filtered by a specific dielectric filter
to obtain the UHF signal. Finally, an amplifier match the signal
at standard power level.
After the description of the quartz optimization,
its oscillator and the other parts of the electronic structure,
we show experimental results obtained with this UHF oscillator such
as :
- g sensitivity measurement in 3 axes (<5.10-10/g in the worst
axis),
- phase noise in inert and under vibration,
- thermal behavior (<20ppm peak to peak in [-55, +95]°C,
- spectral purity (<-60dBc for spurious and sub-harmonics).
A discussion about the other interests of such
a structure will conclude this paper.
2- UHF OSCILLATOR DESCRIPTION
The design [fig.2-1] developed presents more than one
interest. The use of quartz crystal with high quality factor allows
us to obtain low phase noise oscillator. The frequency accuracy
is better than +/-10ppm. The frequency deviation induced by temperature
is small comparatively to other kind of resonators.
Figure 2-1 : principle of the UHF oscillator
2-1- XTAL choice an optimization
The heart of this structure is the quartz crystal, especially
developed for this application.
In order to minimize the effect of phase noise degradation
due to the frequency multiplication ratio (20 Log (N)), we have
chosen to design a quartz crystal oscillator with the highest possible
frequency and compatible with the other characteristics.
The frequency is around 200 MHz. In this case, the frequency
multiplication ratio for a 1 GHz final signal is 5, that induce
noise degradation of 14dB on phase spectrum.
This resonator is able to resist to shocks (fire gun) and
vibration profile specific to fighter airplanes. To reach these
objectives, we have worked on the plate design and on a harded structure
to mount the resonator.
Dimensions of plate, structure and diameters of the electrodes
are adjusted to obtain a 7th overtone AT CUT resonator with high
surtension factor, typically > 70000. We also have not found
significant dips (<10-7) on this resonator. Moreover, the relative
thickness of this plate due to the 7th overtone eliminate the risk
of acoustic effect on the XTAL that we can regularly observe for
thin plate structures.
The resonator is mounted in a T08, 4 points enclosure.
The original mounting structure is optimized :
- to minimize stress and strain on the plate in order to
reduce g sensitivity coefficient in 3 axes.
- to improve the mechanical behavior of the XTAL under vibration.
The lower mechanical resonances of the structure are beyond 6 KHz.
With this process, we have batch of resonators with an average g sensitivity
< 5.10-10/g in the worst axis (Z axis, perpendicular to the plate).
For example, fig. 2-2 shows the repartition of g sensitivity
in a batch.
Figure 2-2 : g sensitivity distribution in a batch
The expected aging for these resonators is nearly 2ppm
the first year and 1ppm after.
Fig 2-3 a, b, c show the practical measurement of g sensitivity
on these resonators. We use a sine excitation with a 60Hz modulation
frequency, the excitation level is 3 g peak.
G sensitivity coefficient k is given by :
where :
- gPEAK : level of vibration (g)
- FM : vibration frequency (Hz)
- FUHF : oscillator frequency
- k : g sensitivity (g-1)
- Pss : phase modulation level (dBc)
(a)
: z axis : k ~ 1,0.10-10 / g
(b) : y axis : k ~ 5.10-11 / g
(c) : x axis : k ~ 5.10-11
/ g
Figure 2-3 a, b, c:
g sensitivity measurement (#354 sample)
The experimental set up is shown fig. 2-4, the UHF signal from DUT is mixed with
a reference signal at F+ ~3KHz and send to the spectrum analyser to measure the modulation
level at FM.
Fig. 2-4 : experimental set-up
2-2- Electronic structure description
2-2-1- XTAL oscillator
XTAL oscillator includes 3 parts :
- oscillator circuit,
- output amplifier,
- circuit for supply regulation and ripple rejection.
The oscillator is not ovenized and is able to work in a
wide range of temperature [-55, +95]°C at ~ 200 MHz. A simple Colpitts structure is well adapted for working
in this conditions and the frequency is also easily adjustable by
external bias.
A cascode amplifier provides a good isolation (~ 50dB) to minimize frequency pulling.
The output HF level is adjusted to provide a full compatibility
with the frequency multiplier input. In order to perform a good
phase noise level even under a very noisily supply (white noise
up to 2 MHz, 100mV peak to peak), a voltage regulator limits pushing
effect and a specific ripple rejection circuit suppresses noise
supply pollution.
2-2-2- Frequency multiplier and UHF filter
For the multiplier the problem is that we are at the edge
of two technologies ; RF frequencies with classical discrete
components and Hyper frequencies with lines and specific microwave
components. Some difficulties appear with the use of standard components.
For instance, multiplication with several tuned stages requires
very low value for inductances and many adjustments. It can’t be
an industrial solution. Moreover, in our case a times 5 multiplication
ratio is not possible.
A diode multiplier with gsm range components seems to be
a good alternative. We are able to choose a times N multiplication
ratio (odd or even). This multiplier (fig. 2-5) is simple and efficient
and does not require any specific adjustment in production phase.
Fig.2-5 : Multiplier synoptic
This multiplier does not bring excess noise on the final
phase spectrum (fig.3-2)
In order to suppress all sub-harmonics (at N x FXTAL)
from the comb generate by the diode multiplier, a selective dielectric
filter is inserted at the output (fig.2-6). With this filter we
ensure the objective of more than –60dBc rejection for spurious
and sub-harmonics.
Fig.2-6 : dielectric filter response
Finally an integrated UHF amplifier gives a 10 dBm output
power. Fig. 2-7 presents final output signal spectrum.
Fig. 2-7 : output UHF signal
3- EXPERIMENTAL RESULTS
3-1- Thermal behavior
Thermal behavior of UHF oscillator is led by XTAL behavior
(fig. 3-1). The frequency drift with temperature with this AT cut
is reduced to ~20ppm peak to peak without any dip in this wide range of temperature.
Fig.3-1 : thermal behavior of the oscillator
3-2- Phase noise
3-2-1- Inert condition
Fig. 3-2 : Phase noise
The lower curve is phase noise at the output of XTAL oscillator.
The upper curve is the noise at final output. No excess intrinsic
noise from multiplier, filter or amplifier appears on final signal.
We find again the ~14dB noise degradation induced by the multiplication.
3-2-2- Phase noise under vibration
Another evaluation of g sensitivity consists in a wide
range excitation noise with a slope + 20dB / decade (fig. 3-3).
The effect on phase noise curve is a floor like on fig. 3-4. This
method is more accurate than sine method. g sensitivity coefficient
is given by :
Fig. 3-3 : excitation noise profile
Fig. 3-3 profile is the control accelerometer response
placed near the oscillator, then we can notice typical spurious
resonance from excitation set-up for F>2KHz.
Fig. 3-4 : phase noise under excitation profile P1 (#354 sample)
Average value on fig. 3-4 allow us to calculate g sensitivity
using the previous formula. In this case k »
1,1.10-10 /g. We find again (at 10 percent) the result obtained
with sine method (fig. 2-3 a).
The applied vibration spectrum (fig. 3-5) is a real avionic
profile. The excitation is oriented on z axis. The phase degradation
induced by this profile is shown (fig. 3-6). Up to 1 KHz, phase
noise contribution is coming from the UHF oscillator, beyond 1 KHz,
the noise contribution is coming from the reference synthetizer.
For instance, inert oscillator phase noise curve is drawn on the
graphic.
Fig. 3-6 : phase noise under previous vibration profile
4- OTHER CHARACTERISTICS
The oscillator is enclosed in a milled aluminium case (fig.
4-1) with a coating treatment resistant to salt fog. The total consumption
is ~50mA under a 15V supply.
Fig. 4-1 : case 3447 FM 13
5- CONCLUSION
A.R.Electronique has designed a high performance and reliability
UHF oscillator especially developed for severe avionic environmental
conditions. This relatively low cost UHF oscillator family has been
introduced in other fields than radar applications, like :
- high stability UHF source lockable on external standard
like cesium or GPS for broadcast applications,
- low phase noise UHF reference for satellite base station.
This work was supported by ANVAR.
REFERENCES
- Low cost frequency multiplier using surface mount pin
diodes
AN 1054 Hewlett Packard.
- Filler R.L.and Vig J.R.
The acceleration sensitivity of quartz crystal oscillators :
Review proc. 41 ST ASFC (1987), pp 398-408.
- Frerking M.E.
Crystal oscillator design and temperature compensation
Van Nostrand Reinhold Company (1978)
- Tuladhar K.K.
High frequency quartz crystal oscillators for avionic systems.
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